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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 2
  • 2SK3079
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 180K
  • 3
  • 2SK3079
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 180K
  • 4
  • 2SK3078
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 171K
  • 5
  • 2SK3078
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 171K
  • 6
  • 2SK3077
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 170K
  • 7
  • 2SK3077
  • Toshiba America, Inc.
  • FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
  • 3页
  • 170K
  • 8
  • 2SK3076S
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 51K
  • 9
  • 2SK3076L
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 51K
  • 10
  • 2SK3075
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 3页
  • 115K
  • 11
  • 2SK3074
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 3页
  • 112K
  • 12
  • 2SK3072
  • Sanyo Semiconductor Corporation
  • N-Channel Silicon MOSFET
  • 4页
  • 26K
  • 13
  • 2SK3070S
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 54K
  • 14
  • 2SK3070L
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 54K
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